Semi insulating GaN

소프트에피는 고객이 요청하는 다양한 크기에 Semi insulating GaN 기판을 생산합니다.

Semi insulating GaN

Semi-insulating GaN

Substrate Sapphire
Wafer Size 2, 4, 6-inch
Thickness 3 ~ 5 ㎛ (± 0.3 ㎛)
Orientation of GaN C-Plane
Resistivity (300K) > 106 Ω·cm
Carrier Concentration > 2E1018 cm-3 (C-doping concentration)
Surface Roughness < 0.3nm